MPN

Infineon ISC Type N-Channel OptiMOST Power-MOSFET, 63 A, 30 V Enhancement, 8-Pin PG-TDSON-8 ISC045N03L5SATMA1

RS Stock No.:: 273-3039
Mfr. Part No.:: ISC045N03L5SATMA1
Brand:: Infineon

Infineon ISC Type N-Channel OptiMOST Power-MOSFET, 63 A, 30 V Enhancement, 8-Pin PG-TDSON-8 ISC045N03L5SATMA1

Subtotal (1 reel of 5000 units)*

£720.00

(exc. VAT)

£865.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 28 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 +	£0.144	£720.00

*price indicative

RS Stock No.:: 273-3039
Mfr. Part No.:: ISC045N03L5SATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	OptiMOST Power-MOSFET
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	30V
	Series	ISC
	Package Type	PG-TDSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Power Dissipation Pd	30W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.89V
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC61249-2-21, RoHS, JEDEC
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type OptiMOST Power-MOSFET
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 30V
	Series ISC
	Package Type PG-TDSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Power Dissipation Pd 30W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.89V
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC61249-2-21, RoHS, JEDEC
	Automotive Standard No