Infineon ISC N-Channel MOSFET, 170 A, 120 V, 8-Pin PG-TDSON-8 ISC032N12LM6ATMA1

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Subtotal (1 pack of 2 units)*

£7.06

(exc. VAT)

£8.48

(inc. VAT)

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2 - 18£3.53£7.06
20 - 198£3.18£6.36
200 - 998£2.93£5.86
1000 - 1998£2.72£5.44
2000 +£2.435£4.87

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RS Stock No.:
349-139
Mfr. Part No.:
ISC032N12LM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

120 V

Series

ISC

Package Type

PG-TDSON-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), which reduces conduction losses and improves performance. The transistor boasts an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching characteristics. Additionally, it offers very low reverse recovery charge (Qrr), minimizing switching losses.

Optimized for high frequency switching and synchronous rectification
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020

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