Infineon N-Channel MOSFET, 77 A, 40 V, 8-Pin TDSON-8 FL ISC046N04NM5ATMA1
- RS Stock No.:
- 234-7003
- Mfr. Part No.:
- ISC046N04NM5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£1,250.00
(exc. VAT)
£1,500.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 February 2026
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Units | Per unit | Per Reel* |
---|---|---|
5000 + | £0.25 | £1,250.00 |
*price indicative
- RS Stock No.:
- 234-7003
- Mfr. Part No.:
- ISC046N04NM5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 77 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | TDSON-8 FL | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 77 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TDSON-8 FL | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Number of Elements per Chip 1 | ||
The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 77A continuous drain current. This product offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Battery powered application
LV motor drives
Very low on-resistanceRDS(on)
100% avalanche tested
175°C junction temperature
Superior thermal resistance
Low gate charge
Reduced switching losses
Suitable for operation at higher frequencies
N-channel
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
LV motor drives
Very low on-resistanceRDS(on)
100% avalanche tested
175°C junction temperature
Superior thermal resistance
Low gate charge
Reduced switching losses
Suitable for operation at higher frequencies
N-channel
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
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