Vishay Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK SIHB080N60E-GE3

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Subtotal (1 pack of 2 units)*

£9.54

(exc. VAT)

£11.44

(inc. VAT)

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Last RS stock
  • Final 1,038 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 8£4.77£9.54
10 - 18£4.30£8.60
20 - 98£4.215£8.43
100 - 498£3.525£7.05
500 +£3.00£6.00

*price indicative

Packaging Options:
RS Stock No.:
268-8290
Mfr. Part No.:
SIHB080N60E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

600 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

Silicon

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance
Avalanche energy rated
Low figure of merit

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