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Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060C7XKSA1

RS Stock No.:: 222-4926
Mfr. Part No.:: IPP60R060C7XKSA1
Brand:: Infineon

Infineon IPP60R Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060C7XKSA1

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Subtotal (1 pack of 2 units)*

£10.08

(exc. VAT)

£12.10

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 952 unit(s) shipping from 09 February 2026

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Units	Per unit	Per Pack*
2 - 8	£5.04	£10.08
10 - 18	£4.635	£9.27
20 - 48	£4.335	£8.67
50 - 98	£4.03	£8.06
100 +	£3.73	£7.46

*price indicative

RS Stock No.:: 222-4926
Mfr. Part No.:: IPP60R060C7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	IPP60R
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	68nC
	Maximum Power Dissipation Pd	162W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.36mm
	Height	9.45mm
	Width	4.57 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series IPP60R
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 68nC
	Maximum Power Dissipation Pd 162W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.36mm
	Height 9.45mm
	Width 4.57 mm
	Automotive Standard No

Datasheet - IPP60R060C7XKSA1

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode