Infineon CoolMOS™ C7 N-Channel MOSFET, 35 A, 600 V, 3-Pin TO-220 IPP60R060C7XKSA1
- RS Stock No.:
- 222-4926
- Mfr. Part No.:
- IPP60R060C7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£11.38
(exc. VAT)
£13.66
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 956 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £5.69 | £11.38 |
| 10 - 18 | £5.235 | £10.47 |
| 20 - 48 | £4.895 | £9.79 |
| 50 - 98 | £4.55 | £9.10 |
| 100 + | £4.21 | £8.42 |
*price indicative
- RS Stock No.:
- 222-4926
- Mfr. Part No.:
- IPP60R060C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | CoolMOS™ C7 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series CoolMOS™ C7 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Related links
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- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R080P7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R180C7XKSA1