Infineon IPP60R N-Channel MOSFET, 23 A, 600 V, 3-Pin TO-220 IPP60R022S7XKSA1
- RS Stock No.:
- 222-4924
- Mfr. Part No.:
- IPP60R022S7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£7.84
(exc. VAT)
£9.41
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 398 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
1 - 9 | £7.84 |
10 - 24 | £7.45 |
25 - 49 | £7.13 |
50 - 99 | £6.82 |
100 + | £6.35 |
*price indicative
- RS Stock No.:
- 222-4924
- Mfr. Part No.:
- IPP60R022S7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 23 A | |
Maximum Drain Source Voltage | 600 V | |
Series | IPP60R | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 22 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 600 V | ||
Series IPP60R | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 22 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.
Minimize conduction losses
Increase energy efficiency
More compact and easier designs
Eliminate or reduce heat sink in solid state design
Lower total cost of ownership (TCO) or bill-of-material (BOM) cost
Increase energy efficiency
More compact and easier designs
Eliminate or reduce heat sink in solid state design
Lower total cost of ownership (TCO) or bill-of-material (BOM) cost
Related links
- Infineon IPP60R N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R022S7XKSA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1
- Infineon CoolMOS™ G7 N-Channel MOSFET 600 V, 8-Pin HSOF-8 IPT60R102G7XTMA1
- ROHM N-Channel MOSFET 600 V, 3-Pin TO-220FM R6055VNXC7G
- ROHM N-Channel MOSFET 600 V, 3-Pin TO-3PF R6055VNZC17
- onsemi QFET N-Channel MOSFET 600 V, 3-Pin TO-3PN FQA24N60
- Infineon CoolMOS CP N-Channel MOSFET 550 V, 3-Pin TO-220 FP IPA50R140CPXKSA1
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin DPAK IRLR2703TRPBF