Vishay Dual Silicon N-Channel MOSFET, 35 A, 600 V, 3-Pin D2PAK SIHB080N60E-GE3

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Bulk discount available

Subtotal (1 tube of 50 units)*

£140.35

(exc. VAT)

£168.40

(inc. VAT)

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Being discontinued
  • Final 1,000 unit(s), ready to ship
Units
Per unit
Per Tube*
50 - 50£2.807£140.35
100 - 450£2.299£114.95
500 - 950£2.163£108.15
1000 +£2.109£105.45

*price indicative

RS Stock No.:
268-8289
Mfr. Part No.:
SIHB080N60E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

600 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

2

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance
Avalanche energy rated
Low figure of merit

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