Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
- RS Stock No.:
- 268-8289
- Mfr. Part No.:
- SIHB080N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£140.35
(exc. VAT)
£168.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £2.807 | £140.35 |
| 100 - 450 | £2.299 | £114.95 |
| 500 - 950 | £2.163 | £108.15 |
| 1000 + | £2.109 | £105.45 |
*price indicative
- RS Stock No.:
- 268-8289
- Mfr. Part No.:
- SIHB080N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | SIHB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.08Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series SIHB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.08Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp
Low effective capacitance
Avalanche energy rated
Low figure of merit
Related links
- Vishay Dual Silicon N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB080N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin D2PAK SIHB085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP150N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-247AC SIHG150N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- Vishay Dual Silicon N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3