Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- RS Stock No.:
- 268-8291
- Mfr. Part No.:
- SIHB085N60EF-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
£165.80
(exc. VAT)
£198.95
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- 1,000 unit(s) shipping from 22 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £3.316 | £165.80 |
| 100 - 450 | £2.713 | £135.65 |
| 500 - 950 | £2.308 | £115.40 |
| 1000 + | £2.248 | £112.40 |
*price indicative
- RS Stock No.:
- 268-8291
- Mfr. Part No.:
- SIHB085N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHB Series MOSFET, 650V Maximum Drain Source Voltage, 34A Maximum Continuous Drain Current - SIHB085N60EF-GE3
This high-voltage N-channel MOSFET is designed for power switching in demanding industrial and electronic systems. It functions as an enhancement-mode transistor suitable for surface-mount assembly in applications requiring robust voltage handling and elevated thermal tolerance. The device supports conventional gate drive levels and is intended for use where controlled conduction and Rapid switching are required.
Features and Benefits:
• 650V drain rating for high-voltage switching capability
• 34A continuous drain current for heavy-load operation
• 0.084Ω Rds(on) minimises conduction losses in circuits
• 184W power dissipation allows sustained thermal load handling
• 63nC typical gate charge for switching performance optimisation
• 30V gate tolerance supports standard gate-drive voltages
• 34A continuous drain current for heavy-load operation
• 0.084Ω Rds(on) minimises conduction losses in circuits
• 184W power dissipation allows sustained thermal load handling
• 63nC typical gate charge for switching performance optimisation
• 30V gate tolerance supports standard gate-drive voltages
Applications
• Suitable for high-voltage SMPS primary-side switching
• Ideal for industrial motor drive inverter stages
• Used for power factor correction front-end switches
• Can be used for high-voltage relay and contactor driver circuits
• Ideal for industrial motor drive inverter stages
• Used for power factor correction front-end switches
• Can be used for high-voltage relay and contactor driver circuits
What temperature range can it operate within?
It is rated to operate down to -55°C and up to a maximum of 150°C, enabling use across wide thermal environments.
How is the package suited to assembly processes?
The device is supplied in a TO-263 surface-mount package with three pins, facilitating automated solder mounting and thermal management on power PCBs.
What is the gate drive requirement limit?
The maximum permissible gate-to-source voltage is 30V, so gate-drive circuitry should be designed to remain within this threshold.
Does the component follow any environmental directives?
It conforms to RoHS requirements, indicating the absence of certain restricted substances in its construction.
Related links
- Vishay SIHB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Infineon CoolMOS C3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 SPW35N60C3FKSA1
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2