Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- RS Stock No.:
- 268-8317
- Mfr. Part No.:
- SIHP085N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£182.50
(exc. VAT)
£219.00
(inc. VAT)
Add 50 units to get free delivery
Stock information currently inaccessible
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £3.65 | £182.50 |
| 100 - 450 | £2.986 | £149.30 |
| 500 - 950 | £2.541 | £127.05 |
| 1000 + | £2.285 | £114.25 |
*price indicative
- RS Stock No.:
- 268-8317
- Mfr. Part No.:
- SIHP085N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct
Low effective capacitance
Avalanche energy rated
Low figure of merit
Related links
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
- Vishay SIHP Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC
- Vishay SIHB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3