Vishay Dual Silicon N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-220AB SIHP085N60EF-GE3
- RS Stock No.:
- 268-8318
- Mfr. Part No.:
- SIHP085N60EF-GE3
- Brand:
- Vishay
Save 37% when you buy 500 units
Subtotal (1 pack of 2 units)*
£13.60
(exc. VAT)
£16.32
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,000 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
2 - 8 | £6.80 | £13.60 |
10 - 18 | £6.115 | £12.23 |
20 - 98 | £5.99 | £11.98 |
100 - 498 | £5.00 | £10.00 |
500 + | £4.26 | £8.52 |
*price indicative
- RS Stock No.:
- 268-8318
- Mfr. Part No.:
- SIHP085N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 34 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct
Low effective capacitance
Avalanche energy rated
Low figure of merit
Avalanche energy rated
Low figure of merit
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