Renesas Electronics ISL6144 Type N-Channel MOSFET, 8 A, 12 V Enhancement, 20-Pin QFN ISL6144IRZA
- RS Stock No.:
- 263-0247
- Mfr. Part No.:
- ISL6144IRZA
- Brand:
- Renesas Electronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 263-0247
- Mfr. Part No.:
- ISL6144IRZA
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | ISL6144 | |
| Package Type | QFN | |
| Mount Type | Surface | |
| Pin Count | 20 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 20mV | |
| Maximum Operating Temperature | 105°C | |
| Height | 6.4mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 0.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series ISL6144 | ||
Package Type QFN | ||
Mount Type Surface | ||
Pin Count 20 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 20mV | ||
Maximum Operating Temperature 105°C | ||
Height 6.4mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 0.9 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Renesas Electronics MOSFETs controller provides a suitably sized n-channel power MOSFET which increases power distribution efficiency and availability when replacing a power ORing diode in high current applications. It also consist of a reverse current fault isolation.
Open drain, active low fault output
Internal charge pump
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