MPN

Infineon IGOT65 Type N-Channel MOSFET, 28 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1

RS Stock No.:: 351-879
Mfr. Part No.:: IGOT65R055D2AUMA1
Brand:: Infineon

Infineon IGOT65 Type N-Channel MOSFET, 28 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1

Bulk discount available

Subtotal (1 unit)*

£5.18

(exc. VAT)

£6.22

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

800 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 9	£5.18
10 - 99	£4.66
100 - 499	£4.30
500 - 999	£3.99
1000 +	£3.57

*price indicative

RS Stock No.:: 351-879
Mfr. Part No.:: IGOT65R055D2AUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	650V
	Series	IGOT65
	Package Type	PG-DSO-20
	Mount Type	Surface
	Pin Count	20
	Maximum Drain Source Resistance Rds	0.066Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	4.7nC
	Maximum Power Dissipation Pd	89W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 650V
	Series IGOT65
	Package Type PG-DSO-20
	Mount Type Surface
	Pin Count 20
	Maximum Drain Source Resistance Rds 0.066Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 4.7nC
	Maximum Power Dissipation Pd 89W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGOT65R055D2AUMA1

COO (Country of Origin):: ID

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)