Infineon IGOT65 GaN N-Channel MOSFET Transistor, 61 A, 650 V, 20-Pin PG-DSO-20 IGOT65R025D2AUMA1
- RS Stock No.:
- 351-883
- Mfr. Part No.:
- IGOT65R025D2AUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£13.74
(exc. VAT)
£16.49
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
1 - 9 | £13.74 |
10 - 99 | £12.37 |
100 + | £11.40 |
*price indicative
- RS Stock No.:
- 351-883
- Mfr. Part No.:
- IGOT65R025D2AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 61 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | PG-DSO-20 | |
Series | IGOT65 | |
Mounting Type | Surface Mount | |
Pin Count | 20 | |
Channel Mode | Enhancement | |
Transistor Material | GaN | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 61 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-DSO-20 | ||
Series IGOT65 | ||
Mounting Type Surface Mount | ||
Pin Count 20 | ||
Channel Mode Enhancement | ||
Transistor Material GaN | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- ID
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)
Related links
- Infineon IGOT65 GaN N-Channel MOSFET Transistor 650 V, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1
- Infineon IGOT65 GaN N-Channel MOSFET Transistor 650 V, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1
- Infineon IGOT65 GaN N-Channel MOSFET Transistor 650 V, 20-Pin PG-DSO-20 IGOT65R035D2AUMA1
- Infineon IGT65 GaN N-Channel MOSFET Transistor 650 V, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1
- Infineon IGT65 GaN N-Channel MOSFET Transistor 650 V, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1
- Infineon IGLT65 GaN N-Channel MOSFET Transistor 650 V, 16-Pin PG-HDSOP-16 IGLT65R025D2AUMA1
- Infineon IGT65 GaN N-Channel MOSFET Transistor 650 V, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1
- Infineon IGT65 GaN N-Channel MOSFET Transistor 650 V, 8-Pin PG-HSOF-8 IGT65R025D2ATMA1