Infineon IGOT65 GaN N-Channel MOSFET Transistor, 34 A, 650 V, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
351-880
Mfr. Part No.:
IGOT65R045D2AUMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

650 V

Series

IGOT65

Package Type

PG-DSO-20

Mounting Type

Surface Mount

Pin Count

20

Channel Mode

Enhancement

Transistor Material

GaN

Number of Elements per Chip

1

COO (Country of Origin):
ID
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Top-side cooled package
JEDEC qualified (JESD47, JESD22)

Related links