onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263 NTBG060N065SC1

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Packaging Options:
RS Stock No.:
254-7665
Mfr. Part No.:
NTBG060N065SC1
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263

Series

NTB

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

117W

Typical Gate Charge Qg @ Vgs

74nC

Forward Voltage Vf

4.5V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L


The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Higher system reliability

Ultra low gate charge

High speed switching and low capacitance

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