onsemi NTB SiC N-Channel MOSFET Transistor, 60 A, 1200 V, 7-Pin D2PAK NTBG040N120SC1
- RS Stock No.:
- 202-5689
- Mfr. Part No.:
- NTBG040N120SC1
- Brand:
- onsemi
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 202-5689
- Mfr. Part No.:
- NTBG040N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | D2PAK (TO-263) | |
| Series | NTB | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.04 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.3V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type D2PAK (TO-263) | ||
Series NTB | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.04 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.3V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
40mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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