onsemi NTB N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK NTBG160N120SC1

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Subtotal (1 reel of 800 units)*

£2,843.20

(exc. VAT)

£3,412.00

(inc. VAT)

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  • 800 unit(s) ready to ship
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800 +£3.554£2,843.20

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RS Stock No.:
205-2493
Mfr. Part No.:
NTBG160N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19.5 A

Maximum Drain Source Voltage

1200 V

Series

NTB

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

225 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

Si

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L


The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 19.5A
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested

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