onsemi NTB N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK NTBG160N120SC1
- RS Stock No.:
- 205-2493
- Mfr. Part No.:
- NTBG160N120SC1
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£2,843.20
(exc. VAT)
£3,412.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
800 + | £3.554 | £2,843.20 |
*price indicative
- RS Stock No.:
- 205-2493
- Mfr. Part No.:
- NTBG160N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 19.5 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | D2PAK (TO-263) | |
Series | NTB | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 225 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.3V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 19.5 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type D2PAK (TO-263) | ||
Series NTB | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 225 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.3V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 19.5A
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested
Drain to source on resistance rating is 224mohm
Ultra Low Gate Charge
High Speed Switching and Low Capacitance
100% Avalanche Tested
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