onsemi N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK NTBG080N120SC1

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Packaging Options:
RS Stock No.:
205-2450
Mfr. Part No.:
NTBG080N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

110 mΩ

Maximum Gate Threshold Voltage

4.3V

Transistor Material

Si

Number of Elements per Chip

1

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L


The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance

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