onsemi N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK NTBG080N120SC1
- RS Stock No.:
- 205-2450
- Mfr. Part No.:
- NTBG080N120SC1
- Brand:
- onsemi
Subtotal (1 unit)*
£4.35
(exc. VAT)
£5.22
(inc. VAT)
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- 745 unit(s) ready to ship
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Units | Per unit |
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1 + | £4.35 |
*price indicative
- RS Stock No.:
- 205-2450
- Mfr. Part No.:
- NTBG080N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 7 | |
Maximum Drain Source Resistance | 110 mΩ | |
Maximum Gate Threshold Voltage | 4.3V | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Maximum Gate Threshold Voltage 4.3V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
The ON Semiconductor silicon carbide (SiC) N-Channel MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Low on resistance 80mohm type
High Junction temperature
Ultra low gate charge
Low effective output capacitance
High Junction temperature
Ultra low gate charge
Low effective output capacitance
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