onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£7.48

(exc. VAT)

£8.98

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,978 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£7.48
10 - 99£6.45
100 - 499£5.59
500 - 999£4.91
1000 +£4.47

*price indicative

Packaging Options:
RS Stock No.:
254-7667
Mfr. Part No.:
NTBL045N065SC1
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

1200V

Series

NTB

Package Type

HPSOF-8L

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

117W

Typical Gate Charge Qg @ Vgs

105nC

Maximum Gate Source Voltage Vgs

22 V

Forward Voltage Vf

4.5V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL


The ON Semiconductor NTB series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Zero reverse recovery current of body diode

Ultra low gate charge

High speed switching and low capacitance

Related links