Infineon N-Channel MOSFET, 98 A, 1200 V, 4-Pin TO-247-4 IMZA120R020M1HXKSA1
- RS Stock No.:
- 248-6678
- Mfr. Part No.:
- IMZA120R020M1HXKSA1
- Brand:
- Infineon
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1 - 1 | £18.69 |
2 - 4 | £17.76 |
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- RS Stock No.:
- 248-6678
- Mfr. Part No.:
- IMZA120R020M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 98 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | TO-247-4 | |
Mounting Type | Through Hole | |
Pin Count | 4 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 98 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
The Infineon CoolSiC 1200 V, 20 mΩ SiC MOSFET in TO247-4 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
VDSS - 1200 V at T - 25°C
IDCC - 98 A at T - 25°C
RDS(on) - 19 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Short circuit withstand time 3 microsecond
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
IDCC - 98 A at T - 25°C
RDS(on) - 19 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Short circuit withstand time 3 microsecond
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
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