Infineon N-Channel MOSFET, 225 A, 1200 V, 4-Pin TO-247-4 IMZA120R007M1HXKSA1
- RS Stock No.:
- 248-6674
- Mfr. Part No.:
- IMZA120R007M1HXKSA1
- Brand:
- Infineon
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Subtotal (1 unit)*
£47.06
(exc. VAT)
£56.47
(inc. VAT)
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- Plus 174 unit(s) shipping from 27 October 2025
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Units | Per unit |
|---|---|
| 1 - 1 | £47.06 |
| 2 - 4 | £44.71 |
| 5 - 9 | £42.83 |
| 10 - 19 | £40.94 |
| 20 + | £39.06 |
*price indicative
- RS Stock No.:
- 248-6674
- Mfr. Part No.:
- IMZA120R007M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 225 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 225 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
The Infineon CoolSiC 1200 V, 7 mΩ SiC MOSFET in TO247-4 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
VDSS - 1200 V at T - 25°C
IDCC - 225 A at T - 25°C
RDS(on) - 7 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
IDCC - 225 A at T - 25°C
RDS(on) - 7 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Related links
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