onsemi SiC N-Channel MOSFET, 68 A, 1200 V, 4-Pin TO-247-4L NTH4L022N120M3S

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Subtotal (1 tube of 450 units)*

£3,702.60

(exc. VAT)

£4,443.30

(inc. VAT)

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  • 999,999,900 unit(s) shipping from 18 December 2025
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Units
Per unit
Per Tube*
450 +£8.228£3,702.60

*price indicative

RS Stock No.:
233-6853
Mfr. Part No.:
NTH4L022N120M3S
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4L

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Maximum Gate Threshold Voltage

4.4V

Number of Elements per Chip

1

Transistor Material

SiC

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L


The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).

The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V
The device offers low switching losses
It is 100% avalanche tested

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