onsemi N-Channel MOSFET, 99 A, 650 V, 3-Pin TO-247 NTHL025N065SC1
- RS Stock No.:
- 248-5817
- Mfr. Part No.:
- NTHL025N065SC1
- Brand:
- onsemi
Subtotal (1 tube of 30 units)*
£326.61
(exc. VAT)
£391.92
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 330 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 + | £10.887 | £326.61 |
*price indicative
- RS Stock No.:
- 248-5817
- Mfr. Part No.:
- NTHL025N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 99 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 99 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 348 W power dissipation, TO247-3L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra Low Gate Charge 164 nC
Low capacitance 278 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 19 mohm
Low capacitance 278 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 19 mohm
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