onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247 NTHL015N065SC1
- RS Stock No.:
- 254-7675
- Mfr. Part No.:
- NTHL015N065SC1
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
£16.09
(exc. VAT)
£19.31
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 514 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £16.09 |
| 10 - 99 | £13.87 |
| 100 + | £12.02 |
*price indicative
- RS Stock No.:
- 254-7675
- Mfr. Part No.:
- NTHL015N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Maximum Power Dissipation Pd | 117W | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Maximum Power Dissipation Pd 117W | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Used in solar inverters
High junction temperature
High speed switching and low capacitance
Related links
- onsemi N-Channel MOSFET 650 V TO247-3L NTHL015N065SC1
- onsemi NVD5C434N N-Channel MOSFET 40 V, 3-Pin DPAK NVD5C434NT4G
- Infineon IMZA75 SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R008M1HXKSA1
- Infineon AIMZA75 SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1
- onsemi N-Channel MOSFET 650 V TO247-4L NTH4L025N065SC1
- onsemi N-Channel MOSFET 650 V TO247-4L NTH4L075N065SC1
- Infineon OptiMOS 6 Power Transistor SiC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1
- Infineon IMZA65 SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R033M2HXKSA1
