onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247
- RS Stock No.:
- 254-7673
- Mfr. Part No.:
- NTHL015N065SC1
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 450 units)*
£6,792.75
(exc. VAT)
£8,151.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 450 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 450 - 450 | £15.095 | £6,792.75 |
| 900 - 900 | £14.793 | £6,656.85 |
| 1350 + | £14.492 | £6,521.40 |
*price indicative
- RS Stock No.:
- 254-7673
- Mfr. Part No.:
- NTHL015N065SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-3L
The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Used in solar inverters
High junction temperature
High speed switching and low capacitance
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