onsemi N-Channel MOSFET, 99 A, 650 V TO247-4L NTH4L025N065SC1

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Packaging Options:
RS Stock No.:
254-7670
Mfr. Part No.:
NTH4L025N065SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

99 A

Maximum Drain Source Voltage

650 V

Package Type

TO247-4L

Mounting Type

Through Hole

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247−4L


The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Used in telecommunication
Ultra low gate charge
High speed switching and low capacitance


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