onsemi NTH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 3-Pin TO-247 NTHL160N120SC1

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Subtotal (1 pack of 2 units)*

£10.53

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£12.636

(inc. VAT)

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2 - 18£5.265£10.53
20 - 198£4.54£9.08
200 +£3.935£7.87

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Packaging Options:
RS Stock No.:
202-5707
Mfr. Part No.:
NTHL160N120SC1
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

119W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.82 mm

Height

20.82mm

Standards/Approvals

RoHS

Length

15.87mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

160mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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