onsemi NTH SiC N-Channel MOSFET Transistor & Diode, 31 A, 1200 V, 3-Pin TO-247 NTHL080N120SC1A

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Packaging Options:
RS Stock No.:
205-2502
Mfr. Part No.:
NTHL080N120SC1A
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

SiC

Number of Elements per Chip

1

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Continuous Drain Current rating is 31A
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD

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