Infineon N-Channel MOSFET, 127 A, 1200 V, 4-Pin TO-247-4 IMZA120R014M1HXKSA1
- RS Stock No.:
- 248-6675
- Mfr. Part No.:
- IMZA120R014M1HXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 240 units)*
£4,886.64
(exc. VAT)
£5,863.92
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,840 unit(s) shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
240 + | £20.361 | £4,886.64 |
*price indicative
- RS Stock No.:
- 248-6675
- Mfr. Part No.:
- IMZA120R014M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 127 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | TO-247-4 | |
Mounting Type | Through Hole | |
Pin Count | 4 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 127 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
The Infineon CoolSiC 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
VDSS - 1200 V at T - 25°C
IDCC - 127 A at T - 25°C
RDS(on) - 14 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Short circuit withstand time 3 microsecond
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
IDCC - 127 A at T - 25°C
RDS(on) - 14 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Short circuit withstand time 3 microsecond
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Related links
- Infineon N-Channel MOSFET 1200 V, 4-Pin TO-247-4 IMZA120R014M1HXKSA1
- Infineon N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R014M1HXKSA1
- Infineon N-Channel MOSFET 1200 V, 3-Pin TO-247 IMW120R020M1HXKSA1
- Infineon N-Channel MOSFET 1200 V, 4-Pin TO-247-4 IMZA120R007M1HXKSA1
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK AUIRFS4310ZTRL
- Infineon N-Channel MOSFET 1200 V, 4-Pin TO-247-4 IMZA120R040M1HXKSA1
- Infineon N-Channel MOSFET 1200 V, 4-Pin TO-247-4 IMZA120R020M1HXKSA1
- Infineon HEXFET N-Channel MOSFET 100 V TO-220AB IRFB4310ZPBF