MPN

Infineon IPN Type N-Channel MOSFET, 6.1 A, 950 V, 3-Pin SOT-223 IPN95R3K7P7ATMA1

RS Stock No.:: 244-2273
Mfr. Part No.:: IPN95R3K7P7ATMA1
Brand:: Infineon

Infineon IPN Type N-Channel MOSFET, 6.1 A, 950 V, 3-Pin SOT-223 IPN95R3K7P7ATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£2.40

(exc. VAT)

£2.90

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

335 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£0.48	£2.40
50 - 120	£0.422	£2.11
125 - 245	£0.392	£1.96
250 - 495	£0.364	£1.82
500 +	£0.342	£1.71

*price indicative

RS Stock No.:: 244-2273
Mfr. Part No.:: IPN95R3K7P7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.1A
	Maximum Drain Source Voltage Vds	950V
	Series	IPN
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	2mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.1A
	Maximum Drain Source Voltage Vds 950V
	Series IPN
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 2mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPN95R3K7P7ATMA1

The Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Best-in-class FOM RDS(on)*(Eoss) energy dissipated by Coss(output capacitance); reduced gate capacitance (Qg), input capacitance and output capacitance

Best-in-class SOT-223 RDS(on)

Best-in-classV( GS)th of 3V and smallest V(GS)th variation of ±0.5V

Integrated Zener Diode ESD protection

Best-in-class Cool MOS™ quality and reliability

Fully optimized portfolio