Infineon IPN Type N-Channel MOSFET, 3 A, 650 V, 3-Pin SOT-223 IPN60R2K0PFD7SATMA1
- RS Stock No.:
- 244-2267
- Mfr. Part No.:
- IPN60R2K0PFD7SATMA1
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
£3.00
(exc. VAT)
£3.60
(inc. VAT)
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In Stock
- Plus 2,700 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.60 | £3.00 |
| 50 - 120 | £0.528 | £2.64 |
| 125 - 245 | £0.492 | £2.46 |
| 250 - 495 | £0.454 | £2.27 |
| 500 + | £0.426 | £2.13 |
*price indicative
- RS Stock No.:
- 244-2267
- Mfr. Part No.:
- IPN60R2K0PFD7SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Low switching losses Eoss,excellent thermal behavior
Fast body diode
Wide range portfolio of RDS(on) and package variations
Integrated zener diode
Related links
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223
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