Infineon IPN Type N-Channel MOSFET, 6.1 A, 75 V, 3-Pin SOT-223 IPN50R2K0CEATMA1
- RS Stock No.:
- 244-2263
- Mfr. Part No.:
- IPN50R2K0CEATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£2.85
(exc. VAT)
£3.42
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,010 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.285 | £2.85 |
| 100 - 240 | £0.271 | £2.71 |
| 250 - 490 | £0.265 | £2.65 |
| 500 - 990 | £0.248 | £2.48 |
| 1000 + | £0.20 | £2.00 |
*price indicative
- RS Stock No.:
- 244-2263
- Mfr. Part No.:
- IPN50R2K0CEATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements.
Extremely low losses due to very low FOM Rdson Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating,Halogen free mold compound.
Qualified for standard grade applications.
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