MPN

Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223

RS Stock No.:: 244-2270
Mfr. Part No.:: IPN60R600PFD7SATMA1
Brand:: Infineon

Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223

Subtotal (1 reel of 3000 units)*

£579.00

(exc. VAT)

£696.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 28 September 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	£0.193	£579.00

*price indicative

RS Stock No.:: 244-2270
Mfr. Part No.:: IPN60R600PFD7SATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	600V
	Series	IPN
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 600V
	Series IPN
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPN60R600PFD7SATMA1

The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.

Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss

Low switching losses Eoss, excellent thermal behavior

Fast body diode

Wide range portfolio of RDS(on) and package variations

Enables high power density designs and small form factors

Enables efficiency gains at higher switching frequencies

Excellent commutation ruggedness

Easy to select the right parts and optimize the design