MPN

Infineon IPN Type N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223

RS Stock No.:: 244-2268
Mfr. Part No.:: IPN60R360PFD7SATMA1
Brand:: Infineon

Infineon IPN Type N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223

Subtotal (1 reel of 3000 units)*

£744.00

(exc. VAT)

£894.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 04 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	£0.248	£744.00

*price indicative

RS Stock No.:: 244-2268
Mfr. Part No.:: IPN60R360PFD7SATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	650V
	Series	IPN
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 650V
	Series IPN
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPN60R360PFD7SATMA1

The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R360PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R360PFD7S in a SOT-223 package features RDS(on) of 360mOhm resulting in low switching losses.

Very low FOM RDS(on) x Eoss

Integrated robust fast body diode

Up to 2kV ESD protection

Wide range of RDS(on) values

Excellent commutation ruggedness

Low EMI

Broad package portfolio