N-Channel MOSFET, 4.5 A, 800 V, 3-Pin SOT-223 Infineon IPN80R1K2P7ATMA1
- RS Stock No.:
- 217-2553
- Mfr. Part No.:
- IPN80R1K2P7ATMA1
- Brand:
- Infineon
5960 In stock - FREE next working day delivery available
Price Each (In a Pack of 20)
£0.683
(exc. VAT)
£0.82
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.683 | £13.66 |
| 100 - 180 | £0.533 | £10.66 |
| 200 - 480 | £0.499 | £9.98 |
| 500 - 980 | £0.465 | £9.30 |
| 1000 + | £0.431 | £8.62 |
*price indicative
- RS Stock No.:
- 217-2553
- Mfr. Part No.:
- IPN80R1K2P7ATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in-class FOM R DS(on) * E oss
reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.5 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.2 Ohm |
| Maximum Gate Threshold Voltage | 3.5V |
| Number of Elements per Chip | 1 |
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