Infineon IPN Type N-Channel MOSFET, 10 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R450P7SATMA1

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£5.62

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£6.74

(inc. VAT)

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20 - 80£0.281£5.62
100 - 180£0.229£4.58
200 - 480£0.223£4.46
500 - 980£0.217£4.34
1000 +£0.212£4.24

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Packaging Options:
RS Stock No.:
217-2548
Mfr. Part No.:
IPN70R450P7SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

700V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13.1nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

6.2W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Width

3.7 mm

Standards/Approvals

No

Height

1.8mm

Length

6.7mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Extremely low losses due to very low FOMR DS(on)*Qg and RDS(on)*Eoss

Excellent thermal behaviour

Integrated ESD protection diode

Low switching losses(Eoss)

Product validation acc. JEDEC Standard

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