Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3
- RS Stock No.:
- 228-2835
- Mfr. Part No.:
- SIA938DJT-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
£13.275
(exc. VAT)
£15.925
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 5,975 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.531 | £13.28 |
| 250 - 600 | £0.505 | £12.63 |
| 625 - 1225 | £0.425 | £10.63 |
| 1250 - 2475 | £0.398 | £9.95 |
| 2500 + | £0.372 | £9.30 |
*price indicative
- RS Stock No.:
- 228-2835
- Mfr. Part No.:
- SIA938DJT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 7.8W | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 7.8W | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel MOSFET provides exceptional versatility for power management design.
Very low RDS(on) and excellent RDS x Qg
Figure-of-Merit (FOM) in an ultra compact
package footprint
Related links
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SC-70
- Vishay Isolated TrenchFET 2 Type P 4.5 A 6-Pin SC-70
- Vishay Isolated TrenchFET 2 Type P 4.5 A 6-Pin SC-70 SIA517DJ-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-89
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3