Infineon IMZ1 Type N-Channel MOSFET, 52 A, 1200 V Enhancement, 4-Pin TO-247 IMZ120R045M1XKSA1

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£10.55

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£12.66

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  • Plus 351 unit(s) shipping from 01 June 2026
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1 - 4£10.55
5 - 9£10.02
10 - 24£9.60
25 - 49£9.18
50 +£8.55

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Packaging Options:
RS Stock No.:
222-4865
Mfr. Part No.:
IMZ120R045M1XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

1200V

Series

IMZ1

Package Type

TO-247

Pin Count

4

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1200 V, 45 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

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