MPN

Infineon IMZ1 Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 4-Pin TO-247

RS Stock No.:: 222-4866
Mfr. Part No.:: IMZ120R090M1HXKSA1
Brand:: Infineon

Infineon IMZ1 Type N-Channel MOSFET, 26 A, 1200 V Enhancement, 4-Pin TO-247

Subtotal (1 tube of 30 units)*

£100.80

(exc. VAT)

£120.90

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

570 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
30 +	£3.36	£100.80

*price indicative

RS Stock No.:: 222-4866
Mfr. Part No.:: IMZ120R090M1HXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	1200V
	Series	IMZ1
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 1200V
	Series IMZ1
	Package Type TO-247
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMZ120R090M1HXKSA1

The Infineon CoolSiC 1200 V, 90 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation