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Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1

RS Stock No.:: 349-114
Mfr. Part No.:: IMYH200R100M1HXKSA1
Brand:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1

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Subtotal (1 unit)*

£19.88

(exc. VAT)

£23.86

(inc. VAT)

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In Stock

Plus 198 unit(s) shipping from 29 December 2025

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Units	Per unit
1 - 9	£19.88
10 - 99	£17.89
100 +	£16.50

*price indicative

RS Stock No.:: 349-114
Mfr. Part No.:: IMYH200R100M1HXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	2000V
	Package Type	PG-TO-247-4-PLUS-NT14
	Series	CoolSiC
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	142mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	55nC
	Maximum Power Dissipation Pd	217W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 2000V
	Package Type PG-TO-247-4-PLUS-NT14
	Series CoolSiC
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 142mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 55nC
	Maximum Power Dissipation Pd 217W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMYH200R100M1HXKSA1

COO (Country of Origin):: MY

The Infineon CoolSiC 2000 V SiC Trench MOSFET is a high performance silicon carbide MOSFET featuring .XT interconnection technology for enhanced thermal and electrical performance. With a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it offers reliable and efficient switching, making it ideal for high voltage power applications. This MOSFET delivers superior performance, ensuring excellent efficiency and robust operation even in demanding environments.

Very low switching losses

Robust body diode for hard commutation

RoHS compliant

Halogen free