Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
- RS Stock No.:
- 284-864
- Mfr. Part No.:
- IMYH200R024M1HXKSA1
- Brand:
- Infineon
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Subtotal (1 unit)*
£90.85
(exc. VAT)
£109.02
(inc. VAT)
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In Stock
- 95 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £90.85 |
| 10 + | £81.77 |
*price indicative
- RS Stock No.:
- 284-864
- Mfr. Part No.:
- IMYH200R024M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 89 A | |
| Maximum Drain Source Voltage | 2000 V | |
| Package Type | PG-TO247-4-PLUS-NT14 | |
| Series | CoolSiC 2000 V SiC Trench MOSFET | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 89 A | ||
Maximum Drain Source Voltage 2000 V | ||
Package Type PG-TO247-4-PLUS-NT14 | ||
Series CoolSiC 2000 V SiC Trench MOSFET | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET represents a cutting edge solution designed for high performance applications. Engineered with advanced .XT interconnection technology, it ensures optimal thermal management and efficiency, making it ideal for demanding environments. With a robust body diode, the MOSFET excels under hard commutation conditions, providing reliable operation in various applications including string inverters and EV charging systems. Its impressive specifications, including a continuous drain current of up to 89 A, underscore its capability to handle significant power loads, while its low switching losses contribute to overall system efficiency. This device has been rigorously validated for industrial applications, ensuring adherence to industry standards and reliability.
Operates at high voltage of 2000 V
Very low on state resistance for efficiency
Benchmark gate threshold voltage for performance
Robust operation with well designed body diode
Validated for industrial use via JEDEC testing
Supports optimal thermal performance through design
Very low on state resistance for efficiency
Benchmark gate threshold voltage for performance
Robust operation with well designed body diode
Validated for industrial use via JEDEC testing
Supports optimal thermal performance through design
Related links
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