Infineon IMY SiC N-Channel MOSFET, 48 A, 2000 V, 4-Pin PG-TO247-3 IMYH200R050M1HXKSA1
- RS Stock No.:
- 349-111
- Mfr. Part No.:
- IMYH200R050M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£34.34
(exc. VAT)
£41.21
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £34.34 |
| 10 - 99 | £30.91 |
| 100 + | £28.50 |
*price indicative
- RS Stock No.:
- 349-111
- Mfr. Part No.:
- IMYH200R050M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 48 A | |
| Maximum Drain Source Voltage | 2000 V | |
| Series | IMY | |
| Package Type | PG-TO247-3 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 48 A | ||
Maximum Drain Source Voltage 2000 V | ||
Series IMY | ||
Package Type PG-TO247-3 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET is a high performance silicon carbide MOSFET featuring .XT interconnection technology for enhanced thermal and electrical performance. With a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it offers reliable and efficient switching, making it ideal for high voltage power applications. This MOSFET delivers superior performance, ensuring excellent efficiency and robust operation even in demanding environments.
Very low switching losses
Robust body diode for hard commutation
RoHS compliant
Halogen free
Robust body diode for hard commutation
RoHS compliant
Halogen free
Related links
- Infineon IMY SiC N-Channel MOSFET 2000 V, 4-Pin PG-TO247-3 IMYH200R075M1HXKSA1
- Infineon IMY SiC N-Channel MOSFET 2000 V, 4-Pin PG-TO247-4 IMYH200R100M1HXKSA1
- Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
- Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
- Infineon IMZC120 SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R040M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 1700 V, 4-Pin PG-TO247-3 IMWH170R650M1XKSA1
- Infineon IMW SiC N-Channel MOSFET 1700 V, 4-Pin PG-TO247-3 IMWH170R1K0M1XKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R015M2HXKSA1