Infineon IMY SiC N-Channel MOSFET, 34 A, 2000 V, 4-Pin PG-TO247-3 IMYH200R075M1HXKSA1

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£32.53

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RS Stock No.:
349-113
Mfr. Part No.:
IMYH200R075M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

2000 V

Series

IMY

Package Type

PG-TO247-3

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET is a high performance silicon carbide MOSFET featuring .XT interconnection technology for enhanced thermal and electrical performance. With a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it offers reliable and efficient switching, making it ideal for high voltage power applications. This MOSFET delivers superior performance, ensuring excellent efficiency and robust operation even in demanding environments.

Very low switching losses
Robust body diode for hard commutation
RoHS compliant
Halogen free

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