Infineon IMZ SiC N-Channel MOSFET, 70 A, 1200 V, 4-Pin PG-TO247-4 IMZA120R030M1HXKSA1

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£21.30

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RS Stock No.:
349-115
Mfr. Part No.:
IMZA120R030M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

1200 V

Series

IMZ

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
CN
The Infineon CoolSiC SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold free on state characteristic.

Best in class switching and conduction losses
Wide gate source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn off switching losses

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