Infineon IMZ SiC N-Channel MOSFET, 70 A, 1200 V, 4-Pin PG-TO247-4 IMZA120R030M1HXKSA1
- RS Stock No.:
- 349-115
- Mfr. Part No.:
- IMZA120R030M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£17.75
(exc. VAT)
£21.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £17.75 |
| 10 - 99 | £15.98 |
| 100 + | £14.73 |
*price indicative
- RS Stock No.:
- 349-115
- Mfr. Part No.:
- IMZA120R030M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | IMZ | |
| Package Type | PG-TO247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series IMZ | ||
Package Type PG-TO247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold free on state characteristic.
Best in class switching and conduction losses
Wide gate source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn off switching losses
Wide gate source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn off switching losses
Related links
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R027M1HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R020M1HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R090M1HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R016M1HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R040M2HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R020M2HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R050M2HXKSA1