Infineon IMZ SiC N-Channel MOSFET, 70 A, 1200 V, 4-Pin PG-TO247-4 IMZA120R030M1HXKSA1

The Infineon CoolSiC SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold free on state characteristic.

Best in class switching and conduction losses
Wide gate source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn off switching losses