Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14
- RS Stock No.:
- 284-862
- Mfr. Part No.:
- IMYH200R024M1HXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 30 units)*
£1,968.21
(exc. VAT)
£2,361.84
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 60 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £65.607 | £1,968.21 |
*price indicative
- RS Stock No.:
- 284-862
- Mfr. Part No.:
- IMYH200R024M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Series | CoolSiC 2000 V SiC Trench MOSFET | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 137nC | |
| Maximum Power Dissipation Pd | 576W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Series CoolSiC 2000 V SiC Trench MOSFET | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 137nC | ||
Maximum Power Dissipation Pd 576W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET represents a cutting edge solution designed for high performance applications. Engineered with Advanced .XT interconnection technology, it ensures optimal thermal management and efficiency, making it Ideal for demanding environments. With a robust body diode, the MOSFET excels under hard commutation conditions, providing reliable operation in various applications including string inverters and EV charging systems. Its impressive specifications, including a continuous drain current of up to 89 A, underscore its capability to handle significant power loads, while its low switching losses contribute to overall system efficiency. This device has been rigorously validated for industrial applications, ensuring adherence to industry standards and reliability.
Operates at high voltage of 2000 V
Very low on state resistance for efficiency
Benchmark gate threshold voltage for performance
Robust operation with well designed body diode
Validated for industrial use via JEDEC testing
Supports optimal thermal performance through design
Related links
- Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
- Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
- Infineon IMY SiC N-Channel MOSFET 2000 V, 4-Pin PG-TO247-4 IMYH200R100M1HXKSA1
- Infineon IMY SiC N-Channel MOSFET 2000 V, 4-Pin PG-TO247-3 IMYH200R050M1HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R040M2HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1
- Infineon IMZ SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 IMZA75R060M1HXKSA1
- Infineon AIM SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 AIMZA75R040M1HXKSA1