Infineon IMZ1 Type N-Channel MOSFET, 4.7 A, 1200 V Enhancement, 4-Pin TO-247 IMZ120R350M1HXKSA1

RS Stock No.:: 222-4873
Mfr. Part No.:: IMZ120R350M1HXKSA1
Brand:: Infineon

Infineon IMZ1 Type N-Channel MOSFET, 4.7 A, 1200 V Enhancement, 4-Pin TO-247 IMZ120R350M1HXKSA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£7.68

(exc. VAT)

£9.22

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 192 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	£3.84	£7.68
10 - 18	£3.495	£6.99
20 - 48	£3.265	£6.53
50 - 98	£3.035	£6.07
100 +	£2.805	£5.61

*price indicative

RS Stock No.:: 222-4873
Mfr. Part No.:: IMZ120R350M1HXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.7A
	Maximum Drain Source Voltage Vds	1200V
	Series	IMZ1
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	350mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.7A
	Maximum Drain Source Voltage Vds 1200V
	Series IMZ1
	Package Type TO-247
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 350mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMZ120R350M1HXKSA1

The Infineon CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Best in class switching and conduction losses

Benchmark high threshold voltage, Vth > 4 V

0V turn-off gate voltage for easy and simple gate drive

Wide gate-source voltage range

Robust and low loss body diode rated for hard commutation

Temperature independent turn-off switching losses

Driver source pin for optimized switching performance