Infineon IMZ1 N-Channel MOSFET, 13 A, 1200 V, 4-Pin TO-247-4 IMZ120R220M1HXKSA1
- RS Stock No.:
- 222-4870
- Mfr. Part No.:
- IMZ120R220M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£102.12
(exc. VAT)
£122.55
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 180 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £3.404 | £102.12 |
| 60 - 120 | £3.234 | £97.02 |
| 150 + | £3.098 | £92.94 |
*price indicative
- RS Stock No.:
- 222-4870
- Mfr. Part No.:
- IMZ120R220M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247-4 | |
| Series | IMZ1 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 220 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247-4 | ||
Series IMZ1 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 220 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon CoolSiC™ MOSFET 1200 V, 220 mΩ in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Driver source pin for optimized switching performance
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Driver source pin for optimized switching performance
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