Infineon IMZ1 N-Channel MOSFET, 56 A, 1200 V, 4-Pin TO-247-4 IMZ120R030M1HXKSA1

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Subtotal (1 tube of 30 units)*

£245.22

(exc. VAT)

£294.27

(inc. VAT)

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Per Tube*
30 - 30£8.174£245.22
60 +£7.765£232.95

*price indicative

RS Stock No.:
222-4862
Mfr. Part No.:
IMZ120R030M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Series

IMZ1

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.

Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation

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