Infineon HEXFET Silicon N-Channel MOSFET, 100 A, 25 V, 4-Pin PQFN 5 x 6 IRFH5250TRPBF

Save 18% when you buy 500 units

Subtotal (1 pack of 10 units)*

£11.00

(exc. VAT)

£13.20

(inc. VAT)

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Per Pack*
10 - 40£1.10£11.00
50 - 90£1.045£10.45
100 - 240£1.002£10.02
250 - 490£0.958£9.58
500 +£0.892£8.92

*price indicative

Packaging Options:
RS Stock No.:
222-4745
Mfr. Part No.:
IRFH5250TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

HEXFET

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

0.00115 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)

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