Infineon HEXFET Silicon N-Channel MOSFET, 30 A, 80 V, 4-Pin PQFN 5 x 6 IRFH8311TRPBF

Subtotal (1 reel of 4000 units)*

£1,192.00

(exc. VAT)

£1,432.00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +£0.298£1,192.00

*price indicative

RS Stock No.:
222-4746
Mfr. Part No.:
IRFH8311TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

80 V

Package Type

PQFN 5 x 6

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

0.0021 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)

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